PART |
Description |
Maker |
EPC-525-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-440-0.9 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-3.0-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-1.0-0 EPC-13.0-1.0-0 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-3.0-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-3.0-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-470-0.9-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
KIP-205-1 |
2.5 Gbps InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG Siemens Semiconductor Group
|
C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|